Samsung’s 10-Nanometer 8 Gigabit DDR4 RAM



samsung-ddr4-ram

Samsung, the South Korean multinational conglomerate company, has recently initiated the mass production of the 10-nanometer class, 8 gigabit DDR4 DRAM chips. These chips are the first of their kind to be produced in the industry to date. The innovative DRAM chips utilize the smallest and latest semiconductor fabrication process of 10 nano-meter. This enables Samsung to build more efficient and faster memory, as these new chips appear to offer significantly faster data transfer rates while simultaneously consuming less power. The technology used by Samsung is anticipated to power the future generation of computers, regardless if they are for enterprise-based or personal usage.

The company's 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry.

said the president of Memory Business for Samsung Electronics, Young-Hyun Jun.

This new DRAM chip is reported to have as much as 3,200 Mbps of data transfer support, enabling this chip to operate faster than the 20 nano-meter DDR4 DRAM’s 2,400 Mbps by over 30 percent. In addition to this, the new DRAM chips are equipped with new modules which use less power by 10 to 20 percent in comparison to the older 20 nano-meter version. Samsung has reported that their new DRAM chips will help to improve the overall design efficiency of major enterprise networks as well as future HPC systems.

Compared to NAND flash storage that are currently used in SSDs and memory cards, the 10 nm process for DRAM is still on a nascent stage and seemed more difficult to accomplish.

reported Menchie Mendoza from Tech Times.

While NAND uses a single transistor for every cell, DRAM crams the same cell space with both a transistor and a capacitor with the latter usually positioned on top. The new 10 nm for DRAM currently has 8 million cells, each of which contains a transistor and a capacitor.

 Through the use of a proprietary circuit design technology paired with quadruple patterning lithography, Samsung Electronics was able to successfully design and create the first 10 nano-meter class cell structure in the industry.

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