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We have a large inventory from top manufacturers such as Other Nsn, Systron Donner Corp National Service Div, Compaq Federal Llc, Honeywell International Inc, Honeywell International Inc Aer with top products such as 0196046P017, 100412, 11-09988-00, 12043-0075, 12043-0075 for NSN 5961-00-752-6115 Semiconductor Device Diode Parts. We pride ourselves on serving the U.S. and her allies while maintaining our No China Sourcing Policy. We invite you to explore our NSN parts at your leisure, and our team of industry experts are on standby to assist you through the purchasing process as needed. Fill out the request for quote form below and hear from a dedicated account representative in fifteen minutes.
Part Information of NSN 5961007526115
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 0196046P017 | other nsn | semiconductor device diode | Avl | RFQ |
| 100412 | systron donner corp national service div | semiconductor device diode | Avl | RFQ |
| 11-09988-00 | compaq federal llc | semiconductor device diode | Avl | RFQ |
| 12043-0075 | honeywell international inc | semiconductor device diode | Avl | RFQ |
| 12043-0075 | honeywell international inc aer | semiconductor device diode | Avl | RFQ |
| 1283780-14 | other nsn | semiconductor device diode | Avl | RFQ |
| 1N964B | freescale semiconductor inc | semiconductor device diode | Avl | RFQ |
| 1N964B | international rectifier corporat | semiconductor device diode | Avl | RFQ |
| 20-00146-004 | raytheon systems ltd | semiconductor device diode | Avl | RFQ |
| 2088809-0030 | honeywell international inc aer | semiconductor device diode | Avl | RFQ |
| 2088809-0030 | honeywell international inc | semiconductor device diode | Avl | RFQ |
| 352250009936 | thales nederland | semiconductor device diode | Avl | RFQ |
| 353-3175-000 | rockwell collins inc div govern | semiconductor device diode | Avl | RFQ |
| 353-3175-001 | rockwell collins inc | semiconductor device diode | Avl | RFQ |
| 4178600-71 | raytheon company | semiconductor device diode | Avl | RFQ |
| 418150-3 | raytheon company | semiconductor device diode | Avl | RFQ |
| 432208062090 | thales nederland | semiconductor device diode | Avl | RFQ |
| 432208062090 | thales optronics bv | semiconductor device diode | Avl | RFQ |
| 50-02833-001 | raytheon systems ltd | semiconductor device diode | Avl | RFQ |
| 575406-3 | hamilton sundstrand corporation | semiconductor device diode | Avl | RFQ |
| 655386 | thales training and simulation inc | semiconductor device diode | Avl | RFQ |
| 655386 | thales training and simulation ltd | semiconductor device diode | Avl | RFQ |
| 691C891P13 | other nsn | semiconductor device diode | Avl | RFQ |
| 7900259-18 | other nsn | semiconductor device diode | Avl | RFQ |
| 943-0202-0025 | selex galileo spa | semiconductor device diode | Avl | RFQ |
| 943-0202-0025 | alenia sistemi difesa spa | semiconductor device diode | Avl | RFQ |
| 943-0202-0025 | alenia aeronautica spa | semiconductor device diode | Avl | RFQ |
| 947060-9642 | litton systems inc div navigati | semiconductor device diode | Avl | RFQ |
| 947060-9642 | litton systems inc | semiconductor device diode | Avl | RFQ |
| B808-964B | allen bradley co electronics div | semiconductor device diode | Avl | RFQ |
| JAN1N964 | other nsn | semiconductor device diode | Avl | RFQ |
| JAN1N964BA | adelco elektronik gmbh | semiconductor device diode | Avl | RFQ |
| MIL-PRF-19500-117 | other nsn | semiconductor device diode | Avl | RFQ |
| MIL-S-19500-117 | other nsn | semiconductor device diode | Avl | RFQ |
| Q68000A2274Z | eads deutschland gmbh verteidig | semiconductor device diode | Avl | RFQ |
| SZ10939-215 | freescale semiconductor inc | semiconductor device diode | Avl | RFQ |
| VBE890-1N964B | thales nederland | semiconductor device diode | Avl | RFQ |
Product Details of NSN 5961007526115
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABBH | INCLOSURE MATERIAL | GLASS |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION |
Similar NSN of 5961007526115
| 5905-00-001-2827(5905000012827) | 5905-00-001-2828(5905000012828) | 5905-00-001-2829(5905000012829) | 5905-00-001-2830(5905000012830) |
| 5905-00-001-2832(5905000012832) | 5905-00-001-2834(5905000012834) | 5905-00-001-2838(5905000012838) | 5905-00-001-2840(5905000012840) |
| 5905-00-001-2842(5905000012842) | 5905-00-001-2843(5905000012843) | 5905-00-001-2847(5905000012847) | 5905-00-001-2851(5905000012851) |
