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We have a large inventory from top manufacturers such as Siliconix Incorporated Div Silic, Harris Corp Semiconductor Sector, Micro Uspd Inc, International Rectifier Corporat, Other Nsn with top products such as V12341, JANTX2N6766, JANTX2N6766, 94-7027, 8878900012-1 for NSN 5961-01-341-9618 Transistor Parts. We pride ourselves on serving the U.S. and her allies while maintaining our No China Sourcing Policy. We invite you to explore our NSN parts at your leisure, and our team of industry experts are on standby to assist you through the purchasing process as needed. Fill out the request for quote form below and hear from a dedicated account representative in fifteen minutes.
Part Information of NSN 5961013419618
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
V12341 | siliconix incorporated div silic | transistor | Avl | RFQ |
JANTX2N6766 | harris corp semiconductor sector | transistor | Avl | RFQ |
JANTX2N6766 | micro uspd inc | transistor | Avl | RFQ |
94-7027 | international rectifier corporat | transistor | Avl | RFQ |
8878900012-1 | other nsn | transistor | Avl | RFQ |
72747 | intersil corporation | transistor | Avl | RFQ |
Product Details of NSN 5961013419618
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AE |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT |
TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL INSULATED GATE TYPE |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0.320 INCHES MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
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