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We have a large inventory from top manufacturers such as Raytheon Company, Raytheon Technical Services Comp, Other Nsn with top products such as PRG395748-10, PRG395748-10, M38510-21101BJA, G395748-10, G395748-10 for NSN 5962-01-373-9122 Microcircuit Memory Parts. We pride ourselves on serving the U.S. and her allies while maintaining our No China Sourcing Policy. We invite you to explore our NSN parts at your leisure, and our team of industry experts are on standby to assist you through the purchasing process as needed. Fill out the request for quote form below and hear from a dedicated account representative in fifteen minutes.
Part Information of NSN 5962013739122
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| PRG395748-10 | raytheon company | microcircuit memory | Avl | RFQ |
| PRG395748-10 | raytheon technical services comp | microcircuit memory | Avl | RFQ |
| M38510-21101BJA | other nsn | microcircuit memory | Avl | RFQ |
| G395748-10 | raytheon company | microcircuit memory | Avl | RFQ |
| G395748-10 | raytheon technical services comp | microcircuit memory | Avl | RFQ |
| 8200801JA | dla land and maritime | microcircuit memory | Avl | RFQ |
Product Details of NSN 5962013739122
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND SCHOTTKY AND PROGRAMMED AND BIPOLAR |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 32768 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| AGAV | END ITEM IDENTIFICATION | SUB HPA E/I FSCM 49956 |
| ZZZX | DEPARTURE FROM CITED DESIGNATOR | ALTERED BY PROGAMMING AND MARKING |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). AND 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-8200801JA GOVERNMENT STANDARD |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-G395748-10 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,SCHOTTKY BIPOLAR 32K PROM,MONOLITHIC SILICON |
| CZEQ | TIME RATING PER CHACTERISTIC | 95.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
Similar NSN of 5962013739122
| 5905-00-001-2827(5905000012827) | 5905-00-001-2828(5905000012828) | 5905-00-001-2829(5905000012829) | 5905-00-001-2830(5905000012830) |
| 5905-00-001-2832(5905000012832) | 5905-00-001-2834(5905000012834) | 5905-00-001-2838(5905000012838) | 5905-00-001-2840(5905000012840) |
| 5905-00-001-2842(5905000012842) | 5905-00-001-2843(5905000012843) | 5905-00-001-2847(5905000012847) | 5905-00-001-2851(5905000012851) |
