Using the Request for Quote (RFQ) form provided on this page, you can request competitive procurement options on part number AM9216BDC with rapid responses always offered by our staff. To ensure that you locate and procure exactly what you need with ease, we list parts with as much information as we can. For example, part number AM9216BDC It is listed as Microcircuit Memory component manufactured by Advanced Micro Devices Inc, specifically under CAGE Code 34335. It is also accompanied by the NSN 5962011092428 for ease of organization, the first digits of the NSN indicating that the part belongs to FSC 5962 Microcircuits Electronic.
NSN Information for Part Number AM9216BDC with NSN 5962-01-109-2428, 5962011092428
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-109-2428 Item Description: Microcircuit Memory | 5962 | 011092428 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Am9216bdc | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-109-2428, 5962011092428
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 28480-1818-0426 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DR |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.230 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND 3-STATE OUTPUT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
