Using the Request for Quote (RFQ) form provided on this page, you can request competitive procurement options on part number 2N1717 with rapid responses always offered by our staff. To ensure that you locate and procure exactly what you need with ease, we list parts with as much information as we can. For example, part number 2N1717 It is listed as Semiconductor Device Set. component manufactured by Api Electronics Inc, specifically under CAGE Code 52333. It is also accompanied by the NSN 5961010660422 for ease of organization, the first digits of the NSN indicating that the part belongs to FSC 5961 Semiconductor Devices and Associated Hardware.
NSN Information for Part Number 2N1717 with NSN 5961-01-066-0422, 5961010660422
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-066-0422 Item Description: Semiconductor Device Set | 5961 | 010660422 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
2n1717 | 2 | 1 | 5 |
Characteristics Data of NSN 5961-01-066-0422, 5961010660422
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.200 INCHES MINIMUM ALL TRANSISTOR AND 0.260 INCHES MAXIMUM ALL TRANSISTOR |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 750.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR |
TEST | TEST DATA DOCUMENT | 18876-10676180 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
ADAV | OVERALL DIAMETER | 0.290 INCHES MINIMUM ALL TRANSISTOR AND 0.370 INCHES MAXIMUM ALL TRANSISTOR |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
AXGY | MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |