Using the Request for Quote (RFQ) form provided on this page, you can request competitive procurement options on part number 5962-8866203NA with rapid responses always offered by our staff. To ensure that you locate and procure exactly what you need with ease, we list parts with as much information as we can. For example, part number 5962-8866203NA It is listed as Microcircuit Memory. component manufactured by Cypress Semiconductor Corporatio, specifically under CAGE Code 65786. It is also accompanied by the NSN 5962013721262 for ease of organization, the first digits of the NSN indicating that the part belongs to FSC 5962 Microcircuits Electronic.
NSN Information for Part Number 5962-8866203NA with NSN 5962-01-372-1262, 5962013721262
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-372-1262 Item Description: Microcircuit Memory | 5962 | 013721262 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8866203na | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-372-1262, 5962013721262
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | HAC/RMPE REAC E/I FSCM 11293 |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
FEAT | SPECIAL FEATURES | CBBL |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 11293-15-1326285-1 |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | RADIATION HARDENED AND ELECTROSTATIC SENSITIVE |
CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-11 MIL-M-38510 |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,SRAM,32K X 8(CY7C197) |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | 128KX8 |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-8866203UA GOVERNMENT STANDARD |
ZZZX | DEPARTURE FROM CITED DESIGNATOR | MODIFIED FOR NUCLEAR HARDNESS IMPACT |