Using the Request for Quote (RFQ) form provided on this page, you can request competitive procurement options on part number ER3400HR with rapid responses always offered by our staff. To ensure that you locate and procure exactly what you need with ease, we list parts with as much information as we can. For example, part number ER3400HR It is listed as Microcircuit Memory. component manufactured by Microchip Components, specifically under CAGE Code 60991. It is also accompanied by the NSN 5962011283905 for ease of organization, the first digits of the NSN indicating that the part belongs to FSC 5962 Microcircuits Electronic.
NSN Information for Part Number ER3400HR with NSN 5962-01-128-3905, 5962011283905
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-128-3905 Item Description: Microcircuit Memory | 5962 | 011283905 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Er3400hr | 5 | 1 | C | A |
Characteristics Data of NSN 5962-01-128-3905, 5962011283905
MRC | Criteria | Characteristic |
---|---|---|
ADAT | BODY WIDTH | 0.380 INCHES MINIMUM AND 0.393 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | DATA LINK 76301 |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
TEST | TEST DATA DOCUMENT | 13499-351-8530 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
ADAQ | BODY LENGTH | 1.065 INCHES MINIMUM AND 1.105 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.125 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND ELECTRICALLY ALTERABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZER | MEMORY DEVICE TYPE | PROM |