Using the Request for Quote (RFQ) form provided on this page, you can request competitive procurement options on part number JANTXV1N965B with rapid responses always offered by our staff. To ensure that you locate and procure exactly what you need with ease, we list parts with as much information as we can. For example, part number JANTXV1N965B It is listed as Semiconductor Device Diode. component manufactured by Other Nsn, specifically under CAGE Code 81350. It is also accompanied by the NSN 5961011620470 for ease of organization, the first digits of the NSN indicating that the part belongs to FSC 5961 Semiconductor Devices and Associated Hardware.
NSN Information for Part Number JANTXV1N965B with NSN 5961-01-162-0470, 5961011620470
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-162-0470 Item Description: Semiconductor Device Diode | 5961 | 011620470 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Jantxv1n965b | 1 | 1 | C | A |
Characteristics Data of NSN 5961-01-162-0470, 5961011620470
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 26.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION |
ABBH | INCLOSURE MATERIAL | GLASS |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |